Effect of Annealing Temperature on the Structural Properties of Dual Solution Synthesized AlS: ZnS Thin Films
DOI: https://doi.org/10.33003/jobasr-2023-v1i1-19
Akwuegbu, C. O.
Nwaokorongwu, E. C.
Okpechi, K. U. P.
Joseph, U.1.
Emea, A. E.
Abstract
Using two solution-based techniques—solution growth technique (SGT) and
sequential ionic layer adsorption and reaction (SILAR) AlS: ZnS alloyed thin
films were successfully produced on glass substrates. The sources of Al, Zn, and
S were aluminum sulphate (AlSO4.7H20), zinc sulphaate (ZnSO4.7H20), and
sodium thiosulphate (Na2S2S03). The complexing agent that was utilized was
ethylene diamine tetraacetic acid (EDTA). Using a Master Chef Annealing
Machine, the deposited alloyed samples were annealed between 373K and 523K.
The scanning electron microscope (SEM) and X-ray diffractometer (XRD) were
used for the crystallographic investigations. Samples R1 and R6 AlS: ZnS alloyed
thin films exhibit well-defined peaks in their XRD pattern, indicating that they
are polycrystalline in nature. We computed their grain sizes. Spectroscopy using
Rutherford backscattering (RBS). Analysis using Rutherford backscattering
spectroscopy (RBS) verified the composition of aluminum, zinc, and sulfur in the
alloyed thin films. The microstructure of the deposited alloyed thin films is
revealed by the results of surface electron microscopy. Two significant
semiconductor materials that have potential uses in optoelectronics,
photovoltaics, and sensing devices are aluminum sulfide (AlS) and zinc sulfide
(ZnS). Depositing these materials in thin films at a reasonable cost and with good
efficiency is possible with dual solution synthesis. However, the annealing
temperature, a crucial factor in establishing the crystal structure, morphology, and
optical properties of these films, can have an impact on their structural
characteristics. Prior studies have examined how the annealing temperature
affects the structural characteristics of AlS and ZnS thin films separately;
however, the dual solution-produced AlS: ZnS thin films have not received as
much attention. The purpose of this work is to examine how the annealing
temperature affects the crystal structure and surface morphology of AlS: ZnS thin
films. The results of this investigation can offer significant understanding
regarding the refinement of the annealing temperature to produce superior AlS:
ZnS thin films for a range of uses. Based on their properties, sulphide alloyed thin
films could find applications in microelectronics, window coating, and
antireflection coating. They work well as coatings for eyeglasses and as absorber
layers for photocells, among other applications.
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